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HAT1069C
Silicon P Channel Power MOS FET Power Switching
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Features
* Low on-resistance RDS(on) = 38 m typ (at VGS = -4.5 V) * High speed switching * Capable of 1.8 V gate drive * High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Index band 6 5 2345 DDDD 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
2 1
3
S 1
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote2 Tch Tstg Ratings -12 8 -4 -16 -4 900 150 -55 to +150 Unit V V A A A mW C C
Notes: 1. PW 10 s, duty cycle 1% 2. When using the grass epoxy board. (FR4 40 x 40 x 1.6 mm)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 1 of 5
HAT1069C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min -12 8 -- -- -0.3 -- -- -- 5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 38 48 60 8 1380 235 115 16 3 6.2 35 150 490 350 -0.8 Max -- -- 10 -1 -1.2 52 70 93 -- -- -- -- -- -- -- -- -- -- -- -1.1 Unit V V A A V m m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 6.4 V, VDS = 0 VDS = -12 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -1.5 A, VGS = -4.5 V ID = -1.5 A, VGS = -2.5 V ID = -1.5 A, VGS = -1.8 V ID = -1.5 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VDS = -10 V VGS = -4.5 V ID = -3 A VGS = -4 V, ID = -1.5 A VDD -10 V RL = 6.6 Rg = 4.7 IF = -4 A, VGS = 0Note3
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 2 of 5
HAT1069C
Main Characteristics
Power vs. Temperature Derating
1600 -100
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Maximum Safe Operation Area
Ta = 25C 1 shot Pulse
Channel Dissipation Pch (mW)
100 s
10 s
PW
1200
Drain Current ID (A)
-10
=
1
10
m
s
D C
800
-1
m s
O pe tio ra n
N
e4 ot
400
-0.1 Operation in this area is limited by RDS(on) -0.01 -0.1 -1
0 0
50
100
150
200
-10
-100
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Note 4: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
-16 -10 V -4.5 V -3 V -2.5 V -16 -2.2 V
Typical Transfer Characteristics
VDS = -10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
-12
-2 V
-12
-8
VGS = -1.8 V
-8
-4 Pulse Test 0 -2 -4 -6 -8 -10
-4
75C 25C Tc = -25C -1 -2 -3 -4 -5
0 0
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (m)
-250 Ta = 25C -200 -150 -4.0 A
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
1000 Pulse Test Ta = 25C -2.5 V 100 VGS = -1.8 V
-100 -1.5 A -50 -1.0 A 0 -2 -4 -6 -8 -10
-4.5 V 10
1 -0.1
-1
-10
Gate to Source Voltage
VGS (V)
Drain Current ID (A)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 3 of 5
HAT1069C
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S) Drain to Source On State Resistance RDS(on) (m)
120 Pulse Test -4 A -1.8 V -1.5 A -4 A -2.5 V 40 20 -25 VGS = -4.5 V 0 25 50 75 100 125 150 ID = -4 A, -1.5 A, -1 A -1 A -1.5 A -1 A 100 Pulse Test
Forward Transfer Admittance vs. Drain Current
100
10
80
Tc = -25C
60
75C 1 25C
0.1 -0.1 -0.3 -1
VDS = -10 V -3 -10
Case Temperature Tc (C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz Ciss 1000 Coss 100
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = -3 A VDD = -10, -12 V -7 V -5 V
-8
-5 V -7 V -10 V VDD = -12 V
-4
Crss
10 0 -2 -4 -6 -8 -10 -12
-16 0
10 Gate Charge Qg (nc)
-8 20
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
Reverse Drain Current vs. Source to Drain Voltage
-16
Switching Time t (ns)
td(off) tf tr 100 td(on)
Reverse Drain Current IDR (A)
VGS = -4.5 V, VDD = -10 V
Pulse Test
-12 -5 V -8 VGS = 0, 5 V -4
10 -0.1
Ta = 25C 0 -0.4 -0.8 -1.2 -1.6 -2.0
-1
-10
-100
Drain Current ID (A)
Source to Drain Voltage VSD (V)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 4 of 5
Gate to Source Voltage VGS (V)
10000
0
0
Capacitance C (pF)
HAT1069C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A S A b
L
e A2 A
Reference Symbol
Dimension in Millimeters
yS
A1 S e1 b l1
c
b2 Pattern of terminal position areas
A-A Section
A A1 A2 b c D E e HE L LP x y b2 e1 l1
Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.2 0.15 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
1.65
Ordering Information
Part Name HAT1069C-EL-E Quantity 3000 pcs Taping Shipping Container
REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 5 of 5
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